 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Silicon Schottky Diode Chips Features I For Detector and Mixer Applications I Low Capacitance for Usage Beyond 40 GHz I ZBD and Low Barrier Designs I P-Type and N-Type Junctions I Large Bond Pad Chip Design Description Alpha's product line of silicon Schottky diode chips are intended for use as detector and mixer devices in hybrid integrated circuits at frequencies from below 100 MHz to higher than 40 GHz. Alpha's "Universal Chip" design features a 4 mil diameter bond pad that is offset from the semiconductor junction preventing damage to the active junction as a result of wire bonding. As power-sensing detectors, these Schottky diode chips all have the same voltage sensitivity so long as the output video impedance is much higher than the video resistance of the diode. Figure 1 shows the expected detected voltage sensitivity as a function of RF source impedance in an untuned circuit. Note that sensitivity is substantially increased by transforming the source impedance from 50 to higher values. Maximum sensitivity occurs when the source impedance equals the video resistance. In a detector circuit operating at zero bias, depending on the video load impedance, a ZBD device with RV less than 10 k may be more sensitive than a low barrier diode with RV greater than 100 k. Applying forward bias reduces the diode video resistance as shown in Figure 2. Lower video resistance also increases the video bandwidth but does not increase voltage sensitivity, as shown in Figure 3. Biased Schottky diodes have better temperature stability and also may be used in temperature compensated detector circuits. P-type Schottky diodes generate lower 1/F noise and are preferred for Doppler mixers and biased detector applications. The bond pad for the P-type Schottky diode is the cathode. N-type Schottky diodes have lower parasitic resistance, RS, and will perform with lower conversion loss in mixer circuits. The bond pad for the N-type Schottky diode is the anode. Electrical Specifications at 25C Part Number CDC7630-000 CDC7631-000 CDB7619-000 CDB7620-000 CDF7621-000 CDF7623-000 Barrier ZBD ZBD Low Low Low Low Junction Type P P P P N N CJ1 (pF) Max. 0.25 0.15 0.10 0.15 0.10 0.30 RT2 () Max. 30 80 40 30 20 10 VF @ 1 mA (mV) Min.-Max. 135-240 150-300 275-375 250-350 270-350 240-300 VB3 (V) Min. 1 2 2 2 2 2 RV @ Zero Bias (k) Typ. 5.5 7.2 735 537 680 245 Outline Drawing 526-006 526-006 526-006 526-006 526-011 526-011 1. CJ for low barrier diodes specified at 0 V. CJ for ZBDs specified at 0.15 V reverse bias. 2. RT is the slope resistance at 10 mA. RS Max. may be calculated from: RS = RT - 2.6 x N. 3. VB for low barrier diodes is specified at 10 A. VB for ZBDs is specified at 100 A. Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 8/01A 1 Silicon Schottky Diode Chips Typical Performance Data 10000 DETECTOR VOLTAGE RF SOURCE IMPEDANCE PInput RFC VIDEO LOAD IMPEDANCE Detected Voltage (mV) 1000 500 100 10 1 0.1 -40 50 25 200 100 Zero Biased Detector DETECTOR VOLTAGE RF SOURCE IMPEDANCE PInput RFC VIDEO LOAD IMPEDANCE -30 -20 -10 0 10 Input Power (dBm) Figure 1. Detected Voltage vs. Input Power and RF Source Impedance Biased Detector 100000 10000 0 dBm +10 dBm Low Barrier 10000 ZBD 1000 Detected Voltage (mV) Video Resistance () 1000 100 10 1 -30 dBm 0.1 0.01 0.001 0.001 0.01 0.1 -10dBm -20 dBm 100 1 10 100 1 10 Forward Bias (A) Figure 2. Video Resistance vs. Forward Bias Current Forward Current (mA) Figure 3. Detected Voltage vs. Forward Current SPICE Model Parameters Parameter IS RS N TT CJ0 M EG XTI FC BV IBV VJ CDB7619 3.70E-08 9 1.05 1E-11 0.08 0.35 0.69 2.0 0.5 2.0 1.00E-05 0.495 CDB7620 5.40E-08 14 1.12 1E-11 0.15 0.35 0.69 2.0 0.5 4.0 1.00E-05 0.495 CDF7621 4.0E-08 12 1.05 1E-11 0.10 0.35 0.69 2.0 0.5 3.0 1.0E-05 0.495 CDF7623 1.1E-07 6 1.04 1E-11 0.22 0.32 0.69 2.0 0.5 2.0 1.0E-05 0.495 CDC7630 5.0E-06 20 1.05 1E-11 0.14 0.40 0.69 2.0 0.5 2.0 1.0E-04 0.340 CDC7631 3.8E-06 51 1.05 1E-11 0.08 0.4 0.69 2.0 0.5 2.0 1.0E-04 0.340 V A V eV S pF Units A 2 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 8/01A Silicon Schottky Diode Chips Outline Drawing 526-006, 526-011 0.015 (0.38 mm) 0.013 (0.33 mm) Absolute Maximum Ratings Characteristic Reverse Voltage (VR) Forward Current (IF) Power Dissipation (PD) Storage Temperature (TST) Operating Temperature (TOP) Value Voltage Rating 50 mA 75 mW -65C to +150C -65C to +150C 0.015 (0.38 mm) 0.013 (0.33 mm) BONDING PAD DIAMETER 0.0035 (0.089 mm)- 0.0045 (0.114 mm) 0.0085 (0.216 mm) 0.0065 (0.165 mm) 526-006 = Cathode bond pad. 526-011 = Anode bond pad. Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 8/01A 3 |
Price & Availability of CDB7619-000
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |